| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-187 - C4-190 | |
| DOI | https://doi.org/10.1051/jphyscol:1988438 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-187-C4-190
DOI: 10.1051/jphyscol:1988438
STC Technology Ltd., London Road, Harlow, GB-Essex CM17 9NA, Great-Britain
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-187-C4-190
DOI: 10.1051/jphyscol:1988438
MODELLING DIFFUSION IN SILICIDES
P.B. MOYNAGH, A.A. BROWN et P.J. ROSSERSTC Technology Ltd., London Road, Harlow, GB-Essex CM17 9NA, Great-Britain
Abstract
This paper outlines models for the redistribution of dopant during the incorporation of silicides in VLSI processes.