| Numéro |
J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989
Beam Injection Assessment of Defects in SemiconductorsInternational Workshop |
|
|---|---|---|
| Page(s) | C6-175 - C6-175 | |
| DOI | https://doi.org/10.1051/jphyscol:1989629 | |
Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-175-C6-175
DOI: 10.1051/jphyscol:1989629
1 Chuo University, Kasuga, Bunkyo-ku, Tokyo 112, Japan
2 Electrotechnical Laboratory, Umezono, Tsukuba, Ibaraki 305, Japan
3 Micronics Japan Co., Ltd. Kichijoji-honcho, Musashino, Tokyo 180, Japan
International Workshop
J. Phys. Colloques 50 (1989) C6-175-C6-175
DOI: 10.1051/jphyscol:1989629
SCANNING ISOTHERMAL CURRENT TRANSIENT SPECTROSCOPY (SICTS) FOR DEEP LEVEL CHARACTERIZATION
Y. TOKUMARU1, H. OKUSHI2 et H. NAKA31 Chuo University, Kasuga, Bunkyo-ku, Tokyo 112, Japan
2 Electrotechnical Laboratory, Umezono, Tsukuba, Ibaraki 305, Japan
3 Micronics Japan Co., Ltd. Kichijoji-honcho, Musashino, Tokyo 180, Japan
Abstract
We reported Isothermal Capacitance Transient Spectroscopy (ICTS), with which deep level signals can be obtained spectroscopically under isothermal condition. ICTS was applied to the measurement of deep states in amorphous and crystalline semiconductors. This method has an advantage : measurements are made at constant temperature. Therefore, this method is considered to be more suitable for the microscopic spatial characterization than scanning DLTS.