| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-101 - C4-104 | |
| DOI | https://doi.org/10.1051/jphyscol:1988421 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-101-C4-104
DOI: 10.1051/jphyscol:1988421
Plessey Research (Caswell) Ltd., Caswell, Towcester, Northants, Great-Britain
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-101-C4-104
DOI: 10.1051/jphyscol:1988421
AN ULTRA HIGH SPEED TRENCH ISOLATED DOUBLE POLYSILICON BIPOLAR PROCESS
M.C. WILSON, S. DUNCAN et P.C. HUNTPlessey Research (Caswell) Ltd., Caswell, Towcester, Northants, Great-Britain
Abstract
This paper describes a double polysilicon bipolar process incorporating a novel self-aligned emitter-base and deep trench isolation. The process has been designed primarily for ultra high speed by minimising parasitic capacitances, and also offers high packing densities. The performance of the technology is demonstrated by a 1/8 static divider operating at a frequency of 10.7GHz. Other representative SSI functions are also described.