| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-647 - C4-650 | |
| DOI | https://doi.org/10.1051/jphyscol:19884135 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-647-C4-650
DOI: 10.1051/jphyscol:19884135
Siemens, Corporate Research and Technology, Microelectronics, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-647-C4-650
DOI: 10.1051/jphyscol:19884135
GATE CURRENTS AND DEVICE DEGRADATION : CARRIER TRANSPORT IN GATE OXIDES OF MOSFET's
A. SCHWERIN et W. HÄNSCHSiemens, Corporate Research and Technology, Microelectronics, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
Abstract
A new approach to calculate gate currents in MOS-transistors is presented. We use a nonlocal expression for carrier injection and a modified drift diffusion approximation to describe the flow of charge inside the oxide. Gate currents of n- and p-channel devices are consistently calculated with one set of parameters. The build up of oxide charge is monitored and the shift in device characteristics is described by solving simultaneously trapping rate equations in the 2-D oxide region.