| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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| Page(s) | C5-453 - C5-456 | |
| DOI | https://doi.org/10.1051/jphyscol:1987595 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-453-C5-456
DOI: 10.1051/jphyscol:1987595
Fujitsu Laboratories Ltd, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-01, Japan
J. Phys. Colloques 48 (1987) C5-453-C5-456
DOI: 10.1051/jphyscol:1987595
NEGATIVE DIFFERENTIAL RESISTANCE OF In0.53Ga0.47As/In0.52Al0.48As RESONANT TUNNELING BARRIERS GROWN BY MBE
S. MUTO, T. INATA, Y, SUGIYAMA, Y. NAKATA, T. FUJII et S. HIYAMIZUFujitsu Laboratories Ltd, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-01, Japan
Abstract
The quantum-well-width dependence of negative differential resistance (NOR) of an InGaAs/InAlAs resonant tunneling barrier (RTB) structure, latticematched to InP substrates, was studied. The best NDR characteristics ever reported (a peak-to-valley ratio of 5.5 at 300K and 13.3 at 77K with a peak current density of 4.8x104 A/cm2 at both 77K and 300K) have been achieved for a resonant tunneling barrier diode with a quantum well width of 32.2 A and a barrier width of 46.9 A. We found that the band nonparabolicity enhances the electron tunneling of the InAlAs barrier layer.