| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-41 - C5-44 | |
| DOI | https://doi.org/10.1051/jphyscol:1987506 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-41-C5-44
DOI: 10.1051/jphyscol:1987506
1 Fujitsu Limited, 10-1 Morinosato-Wakamiya Atsugi Kanagawa-ken 243-01, Japan
2 National Laboratory for High Energy Physics, Oho-machi, Tsukuba-gun Ibaraki-ken 305, Japan
J. Phys. Colloques 48 (1987) C5-41-C5-44
DOI: 10.1051/jphyscol:1987506
MULTIPLE CHARACTERIZATION OF STRUCTURAL PERFECTION IN GaAs/AlAs SUPERLATTICE
I. UMEBU1, S. KOMIYA1, T. NAKAMURA1, S.-I. MUTOH1 et A. IIDA21 Fujitsu Limited, 10-1 Morinosato-Wakamiya Atsugi Kanagawa-ken 243-01, Japan
2 National Laboratory for High Energy Physics, Oho-machi, Tsukuba-gun Ibaraki-ken 305, Japan
Abstract
A small angle X-ray diffraction using synchrotron radiation, microscopic Raman spectroscopy and a high-resolution TEM were used to characterize superlattices (SLs) grown at 500, 600, and 700°C. The periodicity of the SLs was not degraded, but transition-layer thickness increased with the growth temperature. The transition layer was revealed to be atomic-layer steps with a monolayer per length >100 A for the 500°C-, and with one or two monolayers per length less than 30 A for the 700°C-grown SLs.