| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-423 - C5-430 | |
| DOI | https://doi.org/10.1051/jphyscol:1987590 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-423-C5-430
DOI: 10.1051/jphyscol:1987590
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598. U.S.A.
J. Phys. Colloques 48 (1987) C5-423-C5-430
DOI: 10.1051/jphyscol:1987590
RESONANT TUNNELING IN SEMICONDUCTOR HETEROSTRUCTURES
E.E. MENDEZIBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598. U.S.A.
Abstract
This paper reviews some of the recent advances in resonant tunneling in GaAlAs-GaAs-GaAlAs heterostructures. The emphasis is on new physical mechanisms that enlarge the simple picture of one-dimensional, single-band, tunneling in semiconductors. I discuss the effect of a strong magnetic field and of hydrostatic pressure on resonant tunneling, and then I consider X-state resonant tunneling in addition to tunneling via states derived from a Ɖ-point potential profile. The limitations of our current understanding of these processes are pointed out.