| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-457 - C5-461 | |
| DOI | https://doi.org/10.1051/jphyscol:1987596 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-457-C5-461
DOI: 10.1051/jphyscol:1987596
1 Microelectronics Research Center, Georgia Institute of Technology, Atlanta, GA 30332, U.S.A.
2 Naval Research Laboratories, Washington, DC 20375, U.S.A.
J. Phys. Colloques 48 (1987) C5-457-C5-461
DOI: 10.1051/jphyscol:1987596
RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM
C.J. SUMMERS1, K.F. BRENNAN1, A. TORABI1, H.M. HARRIS1 et J. COMAS21 Microelectronics Research Center, Georgia Institute of Technology, Atlanta, GA 30332, U.S.A.
2 Naval Research Laboratories, Washington, DC 20375, U.S.A.
Abstract
In this paper we report experimental and theoretical studies of resonant tunneling and the first observation of resonant tunneling in variably spaced multiple quantum well structures designed for electron injection at voltages between 0.1 and 0.2V. The experiments are in good agreement with a resonant tunneling theory developed for these structures.