Numéro
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
Page(s) C5-117 - C5-120
DOI https://doi.org/10.1051/jphyscol:1987521
3rd International Conference on Modulated Semiconductor Structures

J. Phys. Colloques 48 (1987) C5-117-C5-120

DOI: 10.1051/jphyscol:1987521

PIEZOREFLECTANCE CHARACTERIZATION OF GaAs/AlAs MULTIPLE QUANTUM WELLS

K. ONABE, Y. IDE et M. SUGIMOTO

Opto-Electronics Research Laboratories, NEC Corporation 1-1, Miyazaki 4-chome, Miyamae-ku, Kawasaki, 213 Japan


Abstract
Piezoreflectance characterization has been applied for GaAs/AlAs multiple quantum wells. The room-temperature spectra have revealed sharp reflectance features due to interband transitions in the quantum wells, as well as in the AlAs barrier. The spectral features are described in terms of the strain-induced interband energy shifts.