| Numéro |
J. Phys. Colloques
Volume 49, Numéro C2, Juin 1988
Optical Bistability - IV
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|
|---|---|---|
| Page(s) | C2-305 - C2-306 | |
| DOI | https://doi.org/10.1051/jphyscol:1988271 | |
Optical Bistability - IV
J. Phys. Colloques 49 (1988) C2-305-C2-306
DOI: 10.1051/jphyscol:1988271
1 Optical Sciences Center, University of Arizona, Tucson, AZ 85721, U.S.A.
2 Opto-Electronics Research Laboratories, NEC Corporation, 4-1-1 Miyazaki Miyamae-ku, Kawasaki 213, Japan
3 KLA Instruments Corporation, Santa Clara, CA 95052, U.S.A.
J. Phys. Colloques 49 (1988) C2-305-C2-306
DOI: 10.1051/jphyscol:1988271
ELECTRONIC OPTICAL BISTABILITY IN A GaAs/AlGaAs STRIP-LOADED WAVEGUIDE
H.M. GIBBS1, M. WARREN1, W. GIBBONS1, K. KOMATSU2, D. SARID1, D. HENDRICKS3 et M. SUGIMOTO21 Optical Sciences Center, University of Arizona, Tucson, AZ 85721, U.S.A.
2 Opto-Electronics Research Laboratories, NEC Corporation, 4-1-1 Miyazaki Miyamae-ku, Kawasaki 213, Japan
3 KLA Instruments Corporation, Santa Clara, CA 95052, U.S.A.
Abstract
Single-mode waveguides were fabricated by reactive ion etching of an epitaxial AlGaAs layer above a GaAs/AlGaAs multiple-quantum-well structure. The waveguides were operated as nonlinear Fabry-Perot etalons.