| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-121 - C5-126 | |
| DOI | https://doi.org/10.1051/jphyscol:1987522 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-121-C5-126
DOI: 10.1051/jphyscol:1987522
1 Department of Physics, Fudan University, Shanghai, China
2 Departments of Materials Science and Physics, University of Southern California, Los Angeles, CA 90089-0241, U.S.A.
3 INSA, Département de Génie Physique, Avenue de Rangueil, F-31077 Toulouse Cedex, France
J. Phys. Colloques 48 (1987) C5-121-C5-126
DOI: 10.1051/jphyscol:1987522
RESONANT MIXING BETWEEN ELECTRONIC AND OPTICAL VIBRATIONAL STATES OF A QUANTUM WELL STRUCTURE
P.D. LAO1, W.C. TANG2, A. MADHUKAR2 et F. VOILLOT31 Department of Physics, Fudan University, Shanghai, China
2 Departments of Materials Science and Physics, University of Southern California, Los Angeles, CA 90089-0241, U.S.A.
3 INSA, Département de Génie Physique, Avenue de Rangueil, F-31077 Toulouse Cedex, France
Abstract
We report the first observation of resonant mixing between electronic and optical vibrational states of a quantum well structure brought about by matching the separation between the heavy hole and light hole free excitons with the optical vibrational modes. A total of 27 peaks representing as many as 18 vibrational modes are observed in the luminescence excitation spectra of the GaAs/Al0.32Ga0.68As (100) single quantum well structure studied. This is also the first time that all four possible types of vibrational states - confined in the well or barrier, unconfined, and interface have been simultaneously observed in a quantum well.