J. Phys. Colloques
Volume 44, Numéro C5, Octobre 1983Interactions Laser-Solides, Recuits par Faisceaux d'Energie / Laser-Solid Interactions and Transient Thermal Processing of Materials
|Page(s)||C5-253 - C5-259|
J. Phys. Colloques 44 (1983) C5-253-C5-259
RAPID THERMAL ANNEALING OF SELENIUM IMPLANTED InPS.S. Gill et B.J. Sealy
Royal Signals and Radar Establishment, St Andrews Road, Great Malvern, Worcestershire WR14 3PS, and Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, U.K.
A graphite strip heater and a multiply scanned electron beam have been used to anneal selenium implanted InP. The selenium dose ranged between 5 x 1012 and 1 x 1015 ions cm-2, and the ion energy was 200 keV and all implants were performed into semi-insulating substrates at room temperature. The power density for the e-beam irradiations varied from 8 to 55 W cm-2 corresponding to temperatures up to 1100°C, a fixed temperature of 700°C was used for the graphite strip heater anneals. The majority of samples were coated with about 0.1 µm of pyrolytically deposited Si3N4 at 550°C, however some uncapped samples were also studied. Uncapped samples could not be electrically activated with the e-beam, but a capped low dose, 5 x 1012 cm-2, implant gave an electrical activity of 17%. Activities of about 35% were obtained for doses of about 5 x 1014 cm-2 using either the graphite strip heater or the e-beam. These layers had peak electron concentrations in excess of 1 x 1019 cm-3. We have also found that the Si3N4 deposition process at 550°C for 10 minutes can improve the structural properties of the implanted layer and render this surface layer conducting for a whole range of doses.