J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|Page(s)||C4-327 - C4-330|
J. Phys. Colloques 42 (1981) C4-327-C4-330
ELECTRON-BEAM INDUCED CENTERS IN HYDROGENATED AMORPHOUS SILICONH. Schade and J.I. Pankove
RCA Laboratories, Princeton, NJ 08540, U.S.A.
Photoluminescence was used to compare the effects of low-energy electron bombardment and laser irradiation in a-Si:H. The main effects are similar : 1) decrease of the main luminescence peak at 1.2 eV, 2) enhancement of luminescence at 0.8 eV, and 3) complete recovery of the original properties after annealing at 200°C. The decrease at 1.2 eV however, is much more pronounced with electron than with photon irradiation.