| Numéro |
J. Phys. Colloques
Volume 47, Numéro C8, Décembre 1986
EXAFS and Near Edge Structure IV
|
|
|---|---|---|
| Page(s) | C8-497 - C8-501 | |
| DOI | https://doi.org/10.1051/jphyscol:1986893 | |
EXAFS and Near Edge Structure IV
J. Phys. Colloques 47 (1986) C8-497-C8-501
DOI: 10.1051/jphyscol:1986893
Stanford Synchrotron Radiation Laboratory, Stanford, CA 94305, U.S.A.
J. Phys. Colloques 47 (1986) C8-497-C8-501
DOI: 10.1051/jphyscol:1986893
THE SILICON/GERMANIUM (111) INTERFACE : THE ONSET OF EPITAXY
J.C. WOICIK, R.S. LIST, B.B. PATE et P. PIANETTAStanford Synchrotron Radiation Laboratory, Stanford, CA 94305, U.S.A.
Without abstract
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