| Issue |
J. Phys. Colloques
Volume 49, Number C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-545 - C4-548 | |
| DOI | https://doi.org/10.1051/jphyscol:19884114 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-545-C4-548
DOI: 10.1051/jphyscol:19884114
Siemens AG, Corporate Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-545-C4-548
DOI: 10.1051/jphyscol:19884114
OPTIMISATION OF SELECTIVE POLYSILICON OXIDATION FOR 0.8µ.m-TECHNOLOGY
R. BURMESTER, M. KERBER et C. ZELLERSiemens AG, Corporate Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
Abstract
The dependence of bird's beak length on process parameters has studied for selective polysilicon oxidation. The gate oxide thinning at the field oxide edge is correlated with the voltage drop across the gate oxide for constant current stress. We show, that with an optimised set of process parameters the bird's beak length can be reduced to 0.15µm without deteriorating device reliability.