| Issue |
J. Phys. Colloques
Volume 49, Number C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-507 - C4-510 | |
| DOI | https://doi.org/10.1051/jphyscol:19884105 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-507-C4-510
DOI: 10.1051/jphyscol:19884105
Plessey Research Caswell Ltd., Caswell, Towcester, Northants, Great-Britain
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-507-C4-510
DOI: 10.1051/jphyscol:19884105
FORMATION OF SHALLOW P+ JUNCTIONS BY IMPLANTATION INTO SILICIDE
K.J. BARLOWPlessey Research Caswell Ltd., Caswell, Towcester, Northants, Great-Britain
Abstract
PMOS transistors with channel lengths down to 0.35µm have been fabricated by implanting boron into TiSi2 and using a low temperature anneal (800°C) to outdiffuse the dopant and form the P+ junction. This method allows the formation of shallow, low resistance junctions (< 0.26µm, 5Ω/sq) and retains any ion damage within the silicide. Electrical measurements show reverse leakage currents of ˜ 1nA/cm2 and PMOS characteristics comparable to or better than conventionally formed PMOS transistors.