| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-143 - C4-146 | |
| DOI | https://doi.org/10.1051/jphyscol:1981428 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-143-C4-146
DOI: 10.1051/jphyscol:1981428
Fachbereich Physik, Universität Marburg, F. R. G.
J. Phys. Colloques 42 (1981) C4-143-C4-146
DOI: 10.1051/jphyscol:1981428
MAGNETIC FIELD DEPENDENCE OF THE PHOTO- AND DARK CONDUCTIVITY IN DOPED a-Si:H FILMS
D. Weller, H. Mell, L. Schweitzer and J. StukeFachbereich Physik, Universität Marburg, F. R. G.
Abstract
We have studied the influence of magnetic field on the photo-conductivity σph and dark conductivity σd of glow discharge deposited a-Si:H films doped with phosphorus or boron up to a nominal content of 7 %. The relative change of σph is of the order of 10-4 to 10-2 depending on temperature and on the dopant concentration. Its dependence on magnetic field strength B varies significantly with the position of the Fermi level. In highly doped material (B2H6/SiH4 > 10-3 and PH3/SiH4 > 10-2), we observe - for the first time in this material - magnetic field induced changes of σd. This magnetoconductivity effect is attributed to a second current path in localized band tail states close to the Fermi level.