| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-147 - C4-150 | |
| DOI | https://doi.org/10.1051/jphyscol:1981429 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-147-C4-150
DOI: 10.1051/jphyscol:1981429
C.E.E.S. associé au C.N.R.S., Université des Sciences et Techniques, 34060 Montpellier Cedex, France
J. Phys. Colloques 42 (1981) C4-147-C4-150
DOI: 10.1051/jphyscol:1981429
AC FIELD AND FREQUENCY DEPENDENCE OF a-Si:H CONDUCTIVITY AT 4,2 K
B. Pistoulet, F. Roche and A. CagnaC.E.E.S. associé au C.N.R.S., Université des Sciences et Techniques, 34060 Montpellier Cedex, France
Abstract
The a.c. field and frequency dependences of complex conductivity of a-Si:H sandwiches are observed at 4.2 K. The results are consistent with spatial limitation of motion of carriers, in extended states, confined in potential wells.