Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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Page(s) | C4-475 - C4-478 | |
DOI | https://doi.org/10.1051/jphyscol:19814100 |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-475-C4-478
DOI: 10.1051/jphyscol:19814100
1 Exxon Research and Engineering Company, Linden, New Jersey 07036, U.S.A.
2 Racah Institute of Physics, The Hebrew University, Jerusalem 91000, Israel.
J. Phys. Colloques 42 (1981) C4-475-C4-478
DOI: 10.1051/jphyscol:19814100
CORRELATION OF ELECTRICAL PROPERTIES OF a-SiHx MIS SOLAR CELL STRUCTURES WITH THE STATE OF OXIDATION OF THE INTERFACE
C.R. Wronski1, Y. Goldstein2, S. Kelemen1, B. Abeles1 and H. Witzke11 Exxon Research and Engineering Company, Linden, New Jersey 07036, U.S.A.
2 Racah Institute of Physics, The Hebrew University, Jerusalem 91000, Israel.
Abstract
The collection efficiency, η, for strongly absorbed light and the open circuit voltage, VOC, in a-SiHx MIS solar cell structures are enhanced by the presence of a thin (≤ 20Å) oxide layer at the metal / semiconductor interface. We find that the oxide layer causes an increase in the built in potential which accounts for the enhanced VOC. To account for the enhancement in η requires, in addition, for the semiconductor / metal interface to act as a reflecting barrier for electrons.