J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|Page(s)||C4-475 - C4-478|
J. Phys. Colloques 42 (1981) C4-475-C4-478
CORRELATION OF ELECTRICAL PROPERTIES OF a-SiHx MIS SOLAR CELL STRUCTURES WITH THE STATE OF OXIDATION OF THE INTERFACEC.R. Wronski1, Y. Goldstein2, S. Kelemen1, B. Abeles1 and H. Witzke1
1 Exxon Research and Engineering Company, Linden, New Jersey 07036, U.S.A.
2 Racah Institute of Physics, The Hebrew University, Jerusalem 91000, Israel.
The collection efficiency, η, for strongly absorbed light and the open circuit voltage, VOC, in a-SiHx MIS solar cell structures are enhanced by the presence of a thin (≤ 20Å) oxide layer at the metal / semiconductor interface. We find that the oxide layer causes an increase in the built in potential which accounts for the enhanced VOC. To account for the enhancement in η requires, in addition, for the semiconductor / metal interface to act as a reflecting barrier for electrons.