| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-479 - C4-482 | |
| DOI | https://doi.org/10.1051/jphyscol:19814101 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-479-C4-482
DOI: 10.1051/jphyscol:19814101
1 Department of Physics, Maharshi Dayanand University, Rohtak-124001, India
2 Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, F.R.G.
J. Phys. Colloques 42 (1981) C4-479-C4-482
DOI: 10.1051/jphyscol:19814101
INTERACTION OF ULTRASONIC PHONONS WITH DONOR IMPURITIES IN HYDROGENATED AMORPHOUS GERMANIUM
K.L. Bhatia1 and S. Hunklinger21 Department of Physics, Maharshi Dayanand University, Rohtak-124001, India
2 Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, F.R.G.
Abstract
We have studied the propagation of acoustic surface waves at temperatures between 0.45 K and 475 K in hydrogenated amorphous germanium doped with phosphorous. At low concentrations a strong absorption maximum at 18 K is observed, whereas at high doping rates this absorption is suppressed. In similarity to crystals our results can be explained by the interaction between the sound wave and the degenerate donor ground state.