Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-181-C6-181
DOI: 10.1051/jphyscol:1989635
A NEW APPROACH FOR THE PHYSICAL INTERPRETATION OF TEMPERATURE DEPENDENT EBIC CONTRAST MEASUREMENTS
M. BODE et H.-U. HABERMEIERMax-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, F.R.G.
Abstract
During the last decade several attempts have been made to obtain spectral information about defect levels in silicon with temperature dependent EBIC measurements, but no generally accepted model for the interpretation of the results has emerged. Some of the models even come to contradictory results.