Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-145-C6-150
DOI: 10.1051/jphyscol:1989612
PROBLEMS ASSOCIATED WITH MODELLING OF RECOMBINATION AT DEFECTS, TEMPERATURE DEPENDENCE OF EBIC AND CL
A. JAKUBOWICZWeizmann Institute of Science, Departement of Structural Chemistry, 76100 IL-Rehovot, Israel
Abstract
Two trends can be distinguished in the literature on beam injection methods associated with recombination at defects. The first treats the defect mainly as a "black box" which is described by a global parameter characterizing its electronic behaviour, such as the recombination velocity at a grain boundary, the capture radius of a dislocation, etc.. The second one attempts to give a direct insight into the physical processes at defects.