| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-329 - C5-332 | |
| DOI | https://doi.org/10.1051/jphyscol:1987570 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-329-C5-332
DOI: 10.1051/jphyscol:1987570
Physik-Department E16, Technische Universität München, D-8046 Garching, F.R.G.
J. Phys. Colloques 48 (1987) C5-329-C5-332
DOI: 10.1051/jphyscol:1987570
STRUCTURAL, COMPOSITIONAL, AND OPTICAL PROPERTIES OF ULTRATHIN Si/Ge SUPERLATTICES
K. EBERL, G. KRÖTZ, R. ZACHAI et G. ABSTREITERPhysik-Department E16, Technische Universität München, D-8046 Garching, F.R.G.
Abstract
Strained-layer superlattices (SLS) composed of a sequence of ultrathin Si and Ge layers are grown on Ge(110) buffer layers by MBE. Crystalline quality, relaxation of asymmetrically SLS, and interdiffusion are studied in situ by LEED and AES. New optical transitions in the range of 0.7 to 0.8 eV are observed with photoluminescence experiments.