| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-333 - C5-336 | |
| DOI | https://doi.org/10.1051/jphyscol:1987571 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-333-C5-336
DOI: 10.1051/jphyscol:1987571
1 Electrotechnical Laboratory, Tsukuba, Ibaraki, Japan
2 Mitsubishi Chemical Industries Research Center, Ushiku, Ibaraki, Japan
3 Chuo University, Bunkyo, Tokyo, Japan
4 Meiji University, Kawasaki, Kanagawa, Japan
5 National Institute for Research in Inorganic Materials, Tsukuba, Ibaraki 305, Japan
J. Phys. Colloques 48 (1987) C5-333-C5-336
DOI: 10.1051/jphyscol:1987571
GROWTH CONTROL OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICE BY THE RHEED INTENSITY OSCILLATIONS
T. SAKAMOTO1, K. SAKAMOTO1, H. OYANAGI1, T. YAO1, T. ISHIGURO1, S . NAGAO2, G. HASHIGUCHI3, K. KUNIYOSHI4 et Y. BANDO51 Electrotechnical Laboratory, Tsukuba, Ibaraki, Japan
2 Mitsubishi Chemical Industries Research Center, Ushiku, Ibaraki, Japan
3 Chuo University, Bunkyo, Tokyo, Japan
4 Meiji University, Kawasaki, Kanagawa, Japan
5 National Institute for Research in Inorganic Materials, Tsukuba, Ibaraki 305, Japan
Abstract
Reflection high-energy electron diffraction intensity oscillations are observed during the heteroepitaxy of GexSi1-x/Si strained structure. The oscillations are found to be strongly dependent on the Ge mole fraction. GexSi1-x/Si superlattice structures with a monatomic-layer-precision are grown by the phase-locked epitaxy method.