| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-81 - C5-84 | |
| DOI | https://doi.org/10.1051/jphyscol:1987513 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-81-C5-84
DOI: 10.1051/jphyscol:1987513
Sandia National Laboratories, Albuquerque, NM 87185, U.S.A.
J. Phys. Colloques 48 (1987) C5-81-C5-84
DOI: 10.1051/jphyscol:1987513
THE USE OF COMPOSITIONALLY GRADED LAYERS TO MINIMIZE SURFACE DEFECTS IN In(AsSb) STRAINED-LAYER SUPERLATTICES
R.M. BIEFELDSandia National Laboratories, Albuquerque, NM 87185, U.S.A.
Abstract
Surface defects have been studied in InAsxSb1-x / InSb strained-layer superlattices as a function of the profile of compositionaly graded buffer layers. Comparisons were made between constant composition, step-graded and continuously graded buffer layers. The use of either constant composition layers or step-graded buffer layers resulted in an increase in surface defects for large lattice mismatch (x>0.1). Surface defects were minimized by the use of continuously graded buffer layers for x = 0.2.