| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-321 - C5-327 | |
| DOI | https://doi.org/10.1051/jphyscol:1987569 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-321-C5-327
DOI: 10.1051/jphyscol:1987569
Physik-Department E16, Technische Universität München, D-8046 Garching, F.R.G.
J. Phys. Colloques 48 (1987) C5-321-C5-327
DOI: 10.1051/jphyscol:1987569
Si-Ge STRAINED LAYER SUPERLATTICES
H. BRUGGER et G. ABSTREITERPhysik-Department E16, Technische Universität München, D-8046 Garching, F.R.G.
Abstract
We report on growth and properties of Si/SiGe strained layer superlattices. Critical thicknesses and relaxation processes in single layers are studied with Raman spectroscopy, LEED, and TEM. Phonon Raman scattering is used to determine built-in strain and period length of superlattices. Transport measurements show mobility enhancement in selectively doped samples. The ordering of electronic bands due to strain yields to two-dimensional electron gases in Si.