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Mon compte EDPS

Le Journal de Physique Colloques

Volume 41 / Numéro C4 (Mai 1980)

Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides

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MECHANISMS OF LASER INDUCED CRYSTALLIZATION OF SEMICONDUCTORS p. C4-1

J. M. Poate

DOI: https://doi.org/10.1051/jphyscol:1980401

DENSE-PLASMA DYNAMICS DURING PULSED LASER ANNEALING p. C4-7

Ellen J. Yoffa

DOI: https://doi.org/10.1051/jphyscol:1980402

IMPORTANCE OF THE PLASMA TO PULSED LASER ANNEALING p. C4-15

J. A. Van Vechten

DOI: https://doi.org/10.1051/jphyscol:1980403

NON-THERMAL LASER INDUCED ORDERING AND PLASMA LIFE TIME p. C4-25

R. Tsu et S.S. Jha

DOI: https://doi.org/10.1051/jphyscol:1980404

HEATING OF CRYSTALLINE AND AMORPHOUS SILICON BY C-SWITCHED LASER RADIATION p. C4-31

J.R. Meyer, F.J. Bartoli et M.R. Kruer

DOI: https://doi.org/10.1051/jphyscol:1980405

COMMENTS ON THE MECHANISMS OPERATING IN LASER ANNEALING p. C4-37

G. Vitali et M. Bertolotti

DOI: https://doi.org/10.1051/jphyscol:1980406

SOLUBILITY LIMIT OF DOPANTS IN SILICON IRRADIATED BY RUBY LASER p. C4-41

Fogarassy E., Stuck R., Grob J.J., Grob A. et Siffert P.

DOI: https://doi.org/10.1051/jphyscol:1980407

CO₂-LASER ANNEALING OF BURIED LAYERS PRODUCED BY MEV ION IMPLANTATION p. C4-47

H. Boroffka, E.F. Krimmel, H. Runge et R. Langfeld

DOI: https://doi.org/10.1051/jphyscol:1980408

NUCLEATION THEORY AND DYMAMICS OF FIRST-ORDER PHASE TRANSITIONS NEAR A CRITICAL POINT p. C4-51

K. Binder

DOI: https://doi.org/10.1051/jphyscol:1980409

LASER INDUCED OSCILLATORY PHENOMENA IN AMORPHOUS GeSe₂ FILMS p. C4-63

J. Hajtó

DOI: https://doi.org/10.1051/jphyscol:1980410

LASER ANNEALING OF ELEMENTAL AND COMPOUND SEMICONDUCTOR FILMS p. C4-71

R. Andrew, L. Baufay, L.D. Laude, M. Lovato et M. Wautelet

DOI: https://doi.org/10.1051/jphyscol:1980411

IS LASER-INDUCED NUCLEATION DUE TO A BULK LONG-WAVELENGTH INSTABILITY ? p. C4-75

Binder, K.

DOI: https://doi.org/10.1051/jphyscol:1980412

CHANGES IN SURFACE TOPOGRAPHY AFTER PULSED LASER ANNEAL OF SILICON p. C4-79

C. Hill et D.J. Godfrey

DOI: https://doi.org/10.1051/jphyscol:1980413

TIME DEPENDENCE OF THE NUCLEATION OF SLIP DISLOCATIONS DURING LASER ANNEALING OF SILICON p. C4-85

G.A. Rozgonyi et H. Baumgart

DOI: https://doi.org/10.1051/jphyscol:1980414

SUBSTRATE ORIENTATION EFFECT ON THE REGROWTH OF AMORPHOUS SILICON BY LASER PULSES p. C4-89

D. Hoonhout, T. de Jong et F.W. Saris

DOI: https://doi.org/10.1051/jphyscol:1980415

NONEQUILIBRIUM SOLUBILITY AND SEGREGATION IN ION IMPLANTED, LASER ANNEALED SILICON p. C4-91

S.R. Wilson, C.W. White, F.W. Young, Jr., B.R. Appleton et J. Narayan

DOI: https://doi.org/10.1051/jphyscol:1980416

LASER AND ELECTRON-BEAM INDUCED FORMATION OF METAL-SILICIDES p. C4-97

F. Nava, G. Majni, A. Luches, V. Nassisi et E. Janniti

DOI: https://doi.org/10.1051/jphyscol:1980417

CONCEPTS IN THE THEORY OF NONEQUILIBRIUM PHASE TRANSITIONS p. C4-101

G. Dewel, P. Borckmans et D. Walgraef

DOI: https://doi.org/10.1051/jphyscol:1980418

COMMENTS ON THE MECHANISMS OF LASER ANNEALING p. C4-109

D. Turnbull

DOI: https://doi.org/10.1051/jphyscol:1980419

LASER INDUCED ORDERING AND DEFECTS IN ION-IMPLANTED HEXAGONAL SILICON CARBIDE p. C4-111

V.V. Makarov, T. Tuomi, K. Naukkarinen, M. Luomajärvi et M. Riihonen

DOI: https://doi.org/10.1051/jphyscol:1980420