| Numéro |
J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989
Beam Injection Assessment of Defects in SemiconductorsInternational Workshop |
|
|---|---|---|
| Page(s) | C6-167 - C6-167 | |
| DOI | https://doi.org/10.1051/jphyscol:1989624 | |
Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-167-C6-167
DOI: 10.1051/jphyscol:1989624
1 Weizmann Institute of Science, Department of Structural Chemistry, IL-Rehovot 76100, Israel
2 Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, F.R.G.
International Workshop
J. Phys. Colloques 50 (1989) C6-167-C6-167
DOI: 10.1051/jphyscol:1989624
RECONSTRUCTION OF THE DEFECT GEOMETRY BY SIMULTANEOUS EBIC/CL MEASUREMENTS ; THEORY AND EXPERIMENTAL RESULTS
A. JAKUBOWICZ1, M. BODE2 et H.-U. HABERMEIER21 Weizmann Institute of Science, Department of Structural Chemistry, IL-Rehovot 76100, Israel
2 Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, F.R.G.
Abstract
Electron beam induced current (EBIC) as well as Cathodoluminescence (CL) are widely used to investigate defects in semiconductor materials. A quantification of these methods, however, is difficult, since several possible effects may contribute to the observed contrasts (e.g. geometrical changes of the defect or a varying recombination along the defect).