| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-327 - C4-330 | |
| DOI | https://doi.org/10.1051/jphyscol:1981469 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-327-C4-330
DOI: 10.1051/jphyscol:1981469
RCA Laboratories, Princeton, NJ 08540, U.S.A.
J. Phys. Colloques 42 (1981) C4-327-C4-330
DOI: 10.1051/jphyscol:1981469
ELECTRON-BEAM INDUCED CENTERS IN HYDROGENATED AMORPHOUS SILICON
H. Schade and J.I. PankoveRCA Laboratories, Princeton, NJ 08540, U.S.A.
Abstract
Photoluminescence was used to compare the effects of low-energy electron bombardment and laser irradiation in a-Si:H. The main effects are similar : 1) decrease of the main luminescence peak at 1.2 eV, 2) enhancement of luminescence at 0.8 eV, and 3) complete recovery of the original properties after annealing at 200°C. The decrease at 1.2 eV however, is much more pronounced with electron than with photon irradiation.