| Numéro |
J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989
Beam Injection Assessment of Defects in SemiconductorsInternational Workshop |
|
|---|---|---|
| Page(s) | C6-160 - C6-160 | |
| DOI | https://doi.org/10.1051/jphyscol:1989620 | |
Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-160-C6-160
DOI: 10.1051/jphyscol:1989620
1 Laboratoire de Photoélectricité des Semi-Conducteurs, Faculté des Sciences et Techniques de Marseille Saint-Jérôme, Université d'Aix-Marseille III, F-13397 Marseille Cedex 13, France
2 on leave of the E.N.S. of Takaddoum-Rabat, Maroc
International Workshop
J. Phys. Colloques 50 (1989) C6-160-C6-160
DOI: 10.1051/jphyscol:1989620
EVOLUTIONS OF GRAIN BOUNDARY RECOMBINATION ACTIVITY IN POLYCRYSTALLINE SILICON INVESTIGATED BY LBIC MAPPING AND DLTS
M. PASQUINELLI1, N. M'GAFFAD2, H. AMANRICH1 et S. MARTINUZZI11 Laboratoire de Photoélectricité des Semi-Conducteurs, Faculté des Sciences et Techniques de Marseille Saint-Jérôme, Université d'Aix-Marseille III, F-13397 Marseille Cedex 13, France
2 on leave of the E.N.S. of Takaddoum-Rabat, Maroc
Abstract
In large grained polycrystalline silicon, the recombination activity of grain boundaries (G.B.'s) is typically heterogeneous. This activity may be evaluated by the determination of interfacial recombination velocity S ; which is related to the presence of deep trap levels at G.B.'s.