| Numéro |
J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989
Beam Injection Assessment of Defects in SemiconductorsInternational Workshop |
|
|---|---|---|
| Page(s) | C6-159 - C6-159 | |
| DOI | https://doi.org/10.1051/jphyscol:1989619 | |
Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-159-C6-159
DOI: 10.1051/jphyscol:1989619
1 Laboratoire de Photoélectricité des Semi-Conducteurs, Faculté des Sciences et Techniques de Marseille Saint-Jérôme, Université d'Aix-Marseille III, F-13397 Marseille Cedex 13, France
2 on leave of the E.N.S. of Takaddoum-Rabat, Maroc
International Workshop
J. Phys. Colloques 50 (1989) C6-159-C6-159
DOI: 10.1051/jphyscol:1989619
EXTRINSIC ORIGINE OF RECOMBINATION CENTRES AT GRAIN BOUNDARIES IN P TYPE SILICON BICRYSTALS
M. PASQUINELLI1, N. M'GAFFAD2, H. AMANRICH1, L. AMMOR1 et S. MARTINUZZI11 Laboratoire de Photoélectricité des Semi-Conducteurs, Faculté des Sciences et Techniques de Marseille Saint-Jérôme, Université d'Aix-Marseille III, F-13397 Marseille Cedex 13, France
2 on leave of the E.N.S. of Takaddoum-Rabat, Maroc
Abstract
The origin of recombination centres at grain boundaries (G. B. ' S) ++9 and Y13 in "CZ" grown bicrystals, doped with 1015 cm-3 boron atoms, has been investigated. L.B.I.C. scan maps at λ = 940 nm and global capacitive measurements (C-V plots, DLTS) applied to the space charge region of G.B.'s, have been used. The first technic allows the local determination of interfacial recombination velocity S, while the second one leads to average values of energy ET, density NT and cross section σT of recombination centres of G.B.'s. Doping atoms profiles can also be obtained within G.B.'s.