| Numéro |
J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989
Beam Injection Assessment of Defects in SemiconductorsInternational Workshop |
|
|---|---|---|
| Page(s) | C6-156 - C6-156 | |
| DOI | https://doi.org/10.1051/jphyscol:1989616 | |
Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-156-C6-156
DOI: 10.1051/jphyscol:1989616
1 Laboratoire de Physique des Solides, Université de Constantine, Algeria
2 Laboratoire de Physique des Matériaux, CNRS, F-92195 Meudon, France
International Workshop
J. Phys. Colloques 50 (1989) C6-156-C6-156
DOI: 10.1051/jphyscol:1989616
SEM/EBIC STUDY OF ELECTRICAL PROPERTIES IN BULK AND AT GRAIN BOUNDARIES IN Sb-DOPED GERMANIUM
N. TABET1 et C. MONTY21 Laboratoire de Physique des Solides, Université de Constantine, Algeria
2 Laboratoire de Physique des Matériaux, CNRS, F-92195 Meudon, France
Abstract
SEM/EBIC technique has been used recently to investigate both bulk and grain boundaries (GBs) electrical properties in germanium polycrystals [l]. In this work, the minority carrier diffusion length has been deduced from Schottky contact efficiency measurements using an original model taking into account the recombination of electronic carriers at the metal-germanium interface [2]. The EBIC observation of GBs shows three different behaviours : i) active suboundaries, ii) inactive suboundaries and iii) inactive highly misoriented grain boundaries. These defects have been characterized from a structural point of view using X-Ray topography (Berg Barrett) and ECP (Electron Channeling Pattern).