J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989Beam Injection Assessment of Defects in Semiconductors
|Page(s)||C6-154 - C6-154|
J. Phys. Colloques 50 (1989) C6-154-C6-154
ELECTRICAL ACTIVITY OF GRAIN BOUNDARIES IN SILICON BY THE S.T.E.B.I.C. METHODC. CABANEL et J.-Y. LAVAL
Laboratoire des Microstructures, CNRS-ESPCI, 10, rue Vauquelin, F-75231 Paris Cedex, France
In order to be able to analyse in TEM-STEM the crystallochemistry of recombining defects in p-type polysilicon (L = 100 µm), we have developed the scanning transmission electron beam induced current technique (STEBIC) originally proposed by Sparrow and Valdre. The key point is the making of a thin Schottky diode which must be transparent to electrons. This is realized by means of an Al-Ga ohmic contact, ion milling and an Al or Ag Schottky junction. Under such conditions an optimum lateral resolution of 100 nm is obtained and transmission imaging as well as diffraction , microdiffraction, X-ray microanalysis and EELS can be carried out concurrenty.