Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
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Page(s) | C4-341 - C4-343 | |
DOI | https://doi.org/10.1051/jphyscol:1988472 |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-341-C4-343
DOI: 10.1051/jphyscol:1988472
1 Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-Ku, Tokyo 152, Japan
2 C.S.EL.T., Centro Studi e Laboratori Telecomunicazioni SPA, Via Reiss Romoli 274, I-10148 Torino, Italy
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-341-C4-343
DOI: 10.1051/jphyscol:1988472
FABRICATION AND LASING PROPERTIES OF A NOVEL SINGLE LONGITUDINAL MODE 1.5 µm GaInAsP/InP DISTRIBUTED REFLECTOR (DR) LASER
K. KOMORI1, H. SUZUKI1, K.S. LEE1, S. ARAI1, Y. SUEMATSU1, M. AOKI1 et S. PELLEGRINO21 Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-Ku, Tokyo 152, Japan
2 C.S.EL.T., Centro Studi e Laboratori Telecomunicazioni SPA, Via Reiss Romoli 274, I-10148 Torino, Italy
Résumé
Un nouveau laser, du type à single mode dynamique, avec réflecteur distribué dans les regiones active et passive a été realisé. On a identifié des intéréssantes proprietes comme un elevé rapport de soppression des modes satellites, un petit courrant de seuil et des proprietés d'émission asymmetrique.
Abstract
A new type of dynamic single mode laser, which has distributed reflector (DR) both in active and passive regions has been realized ; attractive properties such as high sub-mode suppression ratio, low threshold and asymmetric properties have been detected.