Numéro
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 88
18th European Solid State Device Research Conference
Page(s) C4-187 - C4-190
DOI https://doi.org/10.1051/jphyscol:1988438
ESSDERC 88
18th European Solid State Device Research Conference

J. Phys. Colloques 49 (1988) C4-187-C4-190

DOI: 10.1051/jphyscol:1988438

MODELLING DIFFUSION IN SILICIDES

P.B. MOYNAGH, A.A. BROWN et P.J. ROSSER

STC Technology Ltd., London Road, Harlow, GB-Essex CM17 9NA, Great-Britain


Abstract
This paper outlines models for the redistribution of dopant during the incorporation of silicides in VLSI processes.