| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-145 - C4-148 | |
| DOI | https://doi.org/10.1051/jphyscol:1988428 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-145-C4-148
DOI: 10.1051/jphyscol:1988428
1 Delft University of Technology, Department of Electrical Engineering, Electronic Instrumentation Laboratory, PO Box 5031, NL-2600 GA Delft, The Netherlands
2 Philips Research Laboratories, PO Box 80000, NL-5600 JA Eindhoven, The Netherlands
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-145-C4-148
DOI: 10.1051/jphyscol:1988428
A MICROWAVE METHOD FOR CONTACTLESS MEASUREMENT OF THE LIFETIME OF FREE CARRIERS IN SILICON WAFERS
T. OTAREDIAN1, S. MIDDELHOEK1 et M.J.J. THEUNISSEN21 Delft University of Technology, Department of Electrical Engineering, Electronic Instrumentation Laboratory, PO Box 5031, NL-2600 GA Delft, The Netherlands
2 Philips Research Laboratories, PO Box 80000, NL-5600 JA Eindhoven, The Netherlands
Abstract
Following an optical excitation of the free carriers in silicon wafers, their lifetimes are determined by measuring the reflected-microwave power. The relations of the lifetime with the light intensity of the optical source and with the parameters concerning the deep recombination centers in the bulk and at the surface of the wafer are discussed.