Numéro
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 88
18th European Solid State Device Research Conference
Page(s) C4-809 - C4-812
DOI https://doi.org/10.1051/jphyscol:19884170
ESSDERC 88
18th European Solid State Device Research Conference

J. Phys. Colloques 49 (1988) C4-809-C4-812

DOI: 10.1051/jphyscol:19884170

CHARACTERIZATION OF ANOMALOUS LATCH-UP EFFECTS BY MEANS OF INFRARED MICROSCOPY AND SPICE SIMULATION

C. CANALI1, F. CORSI2, M. MUSCHITIELLO3, M. STUCCHI3 et E. ZANONI2

1  Dipartimento di Elettronica ed Informatica, Universita' di Padova, Via Gradenigo 6a, I-35131 Padova, Italy
2  Dipartimento di Elettrotecnica ed Elettronica, Universita'di Bari, Via Re David 200, I-70125 Bari, Italy
3  Tecnopolis CSATA, Str. Prov. per Casamassima km 3, I-70010 Valenzano (Bari), Italy


Abstract
Anomalous effects have been evidentiated during pulsed I/O overvoltage tests, such as "window effects", i.e. disappearing of the latch-up condition for high I/O injected current. Infrared microscopy observation reveals that anomalous effects are due to the dynamic redistribution of supply current between different latch-up paths. This analysis is confirmed by the SPICE simulation of the lumped equivalent circuit of a CMOS output comprising two coupled pnpn parasitic structures.