| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-607 - C4-614 | |
| DOI | https://doi.org/10.1051/jphyscol:19884127 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-607-C4-614
DOI: 10.1051/jphyscol:19884127
AT and T Bell Laboratories, Murray Hill, NJ 07974, U.S.A.
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-607-C4-614
DOI: 10.1051/jphyscol:19884127
ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES
R.J. MALIK, A.F.J. LEVI, B.F. LEVINE, R.C. MILLER, D.V. LANG, L.C. HOPKINS et R.W. RYANAT and T Bell Laboratories, Murray Hill, NJ 07974, U.S.A.
Abstract
A new method has been developed for the growth of graded band-gap AlxGa1-xAs alloys by molecular beam epitaxy which is based upon electron beam evaporation of the Group III elements. The metal evaporation rates are measured real-time and feedback controlled using beam flux sensors. The system is computer controlled which allows precise programming of the Ga and Al evaporation rates. The large dynamic response of the metal sources enables for the first time the synthesis of variable band-gap AlxGa1-xAs with arbitrary composition profiles. This new technique has been demonstrated in the growth of unipolar hot electron transistors, graded base bipolar transistors, and M-shaped barrier superlattices.