| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-525 - C4-528 | |
| DOI | https://doi.org/10.1051/jphyscol:19884109 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-525-C4-528
DOI: 10.1051/jphyscol:19884109
Siemens AG, Corporate Research and Technology, Otto-Hahn-Ring 6, D-8000 München, F.R.G.
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-525-C4-528
DOI: 10.1051/jphyscol:19884109
SCALLING OF TRENCH CAPACITOR CELL FOR NEXT GENERATION DRAMs
H.-M. MÜHLHOFF, C.M. ROGERS, P. MURKIN, M. ELAHY et S. RÖHLSiemens AG, Corporate Research and Technology, Otto-Hahn-Ring 6, D-8000 München, F.R.G.
Abstract
When scaling a trench capacitor cell developed for the 4Mbit DRAM further down, both process and device limits are encountered. Device related topics are the subject of this paper. Issues to be discussed are : (1) narrow width effects of pass transistors, (2) short channel effects, (3) effect of storage region on pass transistor, (4) isolation between neighbouring cells.