| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-519 - C4-522 | |
| DOI | https://doi.org/10.1051/jphyscol:19884108 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-519-C4-522
DOI: 10.1051/jphyscol:19884108
Microelectronics Research Institute, Xidian University, Xi'an, China
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-519-C4-522
DOI: 10.1051/jphyscol:19884108
MIGRATION OF FLUORINE ATOMS AND INFLUENCE ON SHALLOW P+N JUNCTION IN B+2 IMPLANTED SILICON UNDER RTA
T.-Q. ZHANG, J.-L. LIU et X.-Y. YANGMicroelectronics Research Institute, Xidian University, Xi'an, China
Abstract
The migration of fluorine atoms in B+2 implanted silicon under RTA has been analysed using SIMS, the microstructural defect of B+2 implanted silicon before and after RTA has been observed using TEM, and the reverse leakage current of B+2 implanted diodes after RTA has been measured. The results show that the amorphous layer and the damaged crystalline region strongly influence fluorine redistribution during RTA, but the anomalous migration of fluorine atoms has no measurable influence on the electrical properties of shallow P+N junction.