| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-399 - C5-402 | |
| DOI | https://doi.org/10.1051/jphyscol:1987585 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-399-C5-402
DOI: 10.1051/jphyscol:1987585
1 ATR Optical and Radio Communications Research Laboratories, Twin 21 MID Tower, 2-1-61 Shiromi, Higashi-ku, Osaka 540, Japan
2 Science and Technical Research Laboratories, NHK 1-10-11 Kinuta, Setagaya-ku, Tokyo 157, Japan
J. Phys. Colloques 48 (1987) C5-399-C5-402
DOI: 10.1051/jphyscol:1987585
EFFECT OF SELECTIVE DOPING ON THE LUMINESCENCE RESPONSE OF A HEAVILY Si-DOPED GaAs/AlGaAs QUANTUM WELL
N. KAMATA1, H. TSUCHIYA1, K. KOBAYASHI2 et T. SUZUKI21 ATR Optical and Radio Communications Research Laboratories, Twin 21 MID Tower, 2-1-61 Shiromi, Higashi-ku, Osaka 540, Japan
2 Science and Technical Research Laboratories, NHK 1-10-11 Kinuta, Setagaya-ku, Tokyo 157, Japan
Résumé
Les caractéristiques de l'émission spontanée dans une couche active fortement dopée ont été grandement améliorées en utilisant une structure de dopage sélectionnée. La séparation spatiale entre les impuretés et les recombinaisons des porteurs majoritaires avec les minoritaires a éliminé la formation de centres de recombinaisons non-radiatives dans le puits de potentiel.
Abstract
Spontaneous emission characteristics in a heavily doped active layer have successfully been improved by using a selective doping structure. Spatial separation of impurities from recombining majority and minority carriers has eliminated the formation of impurity-related nonradiative centers from the well layer.