Numéro
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
Page(s) C5-227 - C5-230
DOI https://doi.org/10.1051/jphyscol:1987547
3rd International Conference on Modulated Semiconductor Structures

J. Phys. Colloques 48 (1987) C5-227-C5-230

DOI: 10.1051/jphyscol:1987547

ASYMMETRIC SHUBNIKOV-DE HAAS OSCILLATIONS AND HALL PLATEAUS OF HETEROJUNCTIONS IN THE QUANTUM HALL REGIME

R.R. GERHARDTS, R.J. HAUG et K. PLOOG

Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 80, F.R.G.


Résumé
Nous avons observé, sur des heterojunctions GaAs-AlGaAs dopées en Be et en Si, des déplacements importants et de sens opposé de la position des plateaux de la resistance de Hall. Nous presentons un calcul de transport au niveau microscopique, basé sur l'approximation self-consistent de la matrice T, qui explique les déplacements en terme d'interaction electron-impureté non-Bornienne.


Abstract
We present experimental results on Be-doped and Si-doped GaAs/AlGaAs heterostructures which show strong and opposite shifts of the quantum Hall plateaus. We also present a microscopic transport calculation based on the self-consistent T-matrix approximation, which explains these shifts in terms of strong, non-Bornian scattering of electrons by individual impurities.