| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-223 - C5-226 | |
| DOI | https://doi.org/10.1051/jphyscol:1987546 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-223-C5-226
DOI: 10.1051/jphyscol:1987546
Departamento de Física e Ciência dos Materiais, Instituto de Física e Química de São Carlos, Universidade de São Paulo, C.P. 369, 13560 São Carlos, São Paulo, Brasil
J. Phys. Colloques 48 (1987) C5-223-C5-226
DOI: 10.1051/jphyscol:1987546
EXCITON-PHONON SYSTEM IN GaAs-Ga1-xAlxAs QUANTUM-WELL WIRES
M.H. DEGANI et O. HIPÓLITODepartamento de Física e Ciência dos Materiais, Instituto de Física e Química de São Carlos, Universidade de São Paulo, C.P. 369, 13560 São Carlos, São Paulo, Brasil
Abstract
The binding energies of light - and heavy - hole exciton-phonon systems in GaAs-Ga1-x AlxAs quantum wires are calculated as a function of the sizes of the wire for several values of the heights of the barrier potential. It is found that the corrections due to exciton-phonon coupling are quite significant.