Numéro
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
Page(s) C5-585 - C5-588
DOI https://doi.org/10.1051/jphyscol:19875127
3rd International Conference on Modulated Semiconductor Structures

J. Phys. Colloques 48 (1987) C5-585-C5-588

DOI: 10.1051/jphyscol:19875127

RESONANT TUNNELING DEVICES

R.E. NAHORY et N. TABATABAIE

Bell Communications Research, Red Bank, NJ 07701-7020, U.S.A.


Abstract
The physics of resonant tunneling is as yet a research topic and has been discussed at some length elsewhere in this conference. The subject of this paper, devices using the phenomenon of resonant tunneling, is one which is in its infancy. Nevertheless, it is of great interest to examine the present state and to explore some of the directions which research is taking in the study of resonant tunneling devices. Among other things, these devices offer the possibilities of very high speed and very small size, and thus advantages for very large scale integration.