Numéro
J. Phys. Colloques
Volume 47, Numéro C7, Novembre 1986
33rd International Field Emission Symposium / 33ème Symposium International d'Emission de Champ
Page(s) C7-303 - C7-308
DOI https://doi.org/10.1051/jphyscol:1986752
33rd International Field Emission Symposium / 33ème Symposium International d'Emission de Champ

J. Phys. Colloques 47 (1986) C7-303-C7-308

DOI: 10.1051/jphyscol:1986752

PULSED-LASER ATOM-PROBE STUDY OF Al-GaAs INTERFACES

O. NISHIKAWA, M. YANAGISAWA et M. NAGAI

Department of Materials Science and Engineering, The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 227, Japan


Abstract
The interfaces of a thin Al layer and non-doped, Zn-doped and Si-doped GaAs were mass analyzed by the pulsed-laser atom-probe. The variation of depth profile of composition across the interfaces with temperatures indicates that the diffusibility of Al and Ga across the Al-GaAs interfaces appears to be high for non-doped and Zn-doped GaAs and low for Si-doped GaAs. The depth profiles also indicate that As is not mobile for the present temperature range, below 350K, and serves as a reference marker for diffusing Ga and Al.