| Numéro |
J. Phys. Colloques
Volume 47, Numéro C7, Novembre 1986
33rd International Field Emission Symposium / 33ème Symposium International d'Emission de Champ
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| Page(s) | C7-309 - C7-314 | |
| DOI | https://doi.org/10.1051/jphyscol:1986753 | |
J. Phys. Colloques 47 (1986) C7-309-C7-314
DOI: 10.1051/jphyscol:1986753
ATOM-PROBE STUDY OF METAL-SiC INTERFACES
S. NAKAMURA1, Y. HASEGAWA2, T. HASHIZUME3 et T. SAKURAI21 The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka, Japan
2 The Institute for Solid State Physics (ISSP), the University of Tokyo, Minato-ku, Tokyo 106, Japan
3 AT & T. Bell Laboratory, Murray Hill, N.J. 07974, U.S.A.
Abstract
Good quality field ion images of 2H-SiC and β-SiC whisker were obtained using a He imaging gas at 20K. The compositional depth profiles of annealed specimens of SiC showed that the surface region was enriched in C and that the top layer consisted of carbon atoms only. In contrary, the Si concentration at the surface was found to increase when SiC was annealed in the presence of O2 or H2O gas. In our present study on the Ti/SiC system, we conclude ; (1) Ti did not mix with SiC at all below room temperature, in contrast to the case of the Ti/Si system. (2) Annealing at higher temperatures (~700°C) resulted in intermixing of Ti, Si and C at the interface. The thickness of the interface was estimated to be approximately three atomic layers. In the Pd/SiC system, intermixing at the interface was noticed after annealing at lower temperature than the Ti/SiC system.