| Numéro |
J. Phys. Colloques
Volume 43, Numéro C5, Décembre 1982
Colloque International sur l'Epitaxie des Semiconducteurs / Epitaxial Growth of Semiconductor Material
|
|
|---|---|---|
| Page(s) | C5-17 - C5-17 | |
| DOI | https://doi.org/10.1051/jphyscol:1982503 | |
Colloque International sur l'Epitaxie des Semiconducteurs / Epitaxial Growth of Semiconductor Material
J. Phys. Colloques 43 (1982) C5-17-C5-17
DOI: 10.1051/jphyscol:1982503
Department of Electrical Engineering, University of Utah, Salt Lake City, Utah 84112, U.S.A.
J. Phys. Colloques 43 (1982) C5-17-C5-17
DOI: 10.1051/jphyscol:1982503
THERMODYNAMIC ASPECTS OF ORGANOMETALLIC VPE
G.B. StringfellowDepartment of Electrical Engineering, University of Utah, Salt Lake City, Utah 84112, U.S.A.
Abstract
Organometallic vapor phase epitaxy (OMVPE) is a new crystal growth technique which is rapidly gaining popularity due to its simplicity, flexibility and proven ability to grow excellent quality III/V compounds and alloys for device, applications.