J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|Page(s)||C4-447 - C4-450|
J. Phys. Colloques 42 (1981) C4-447-C4-450
OBSERVATION OF ACOUSTIC EMISSION FROM a-Si : H PIN JUNCTIONSY. Mishima, M. Hirose, I. Suemune, M. Yamanishi and Y. Osaka
Department of Electrical Engineering, Hiroshima University, Hiroshima 730, Japan
We have observed, for the first time, acoustic signal originating from the nonradiative recombination of photocarriers generated by Ar+ ion laser in biased a-Si : H pin diodes. The photoacoustic signal increases with laser power as well as with forward bias. It is found that the ratio of the photoacoustic signal at a given forward bias to the signal at zero bias increases with a decrease of gap state density in the i layer of the diode and exhibits correlation with the n-factor.