| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-297 - C4-300 | |
| DOI | https://doi.org/10.1051/jphyscol:1981462 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-297-C4-300
DOI: 10.1051/jphyscol:1981462
1 Electrotechnical Laboratory, 1-1-4 Umezono, Sakuramura, Niiharigun, Ibaragi 305, Japan.
J. Phys. Colloques 42 (1981) C4-297-C4-300
DOI: 10.1051/jphyscol:1981462
ANNEALING STUDIES ON LOW OPTICAL ABSORPTION OF GD a-Si:H USING PHOTOACOUSTIC SPECTROSCOPY
S. Yamasaki1, N. Hata1, T. Yoshida1, H. Oheda1, A. Matsuda1, H. Okushi1 and K. Tanaka11 Electrotechnical Laboratory, 1-1-4 Umezono, Sakuramura, Niiharigun, Ibaragi 305, Japan.
Abstract
We have performed photoacoustic spectroscopy (PAS), ESR and ir absorption measurements on undoped GD a-Si:H film before and after isochronal annealings, from which absorption coefficient (down to α = 1 cm-1), spin density (Ns) and bonded H content (CH) were determined. It has been found out that the extraporated spectrum of spin-free a-Si:H shows a long exponential tail, and that additional broad absorption is strongly correlated with Ns. The origin of α below Eo is discussed.